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Characterization of charge injection and trapping in scaled SONOS/MONOS memory devices

  • Published:1987-03 Issue:3 Volume:30 Page:307-319
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Chao Chen-Chung,White Marvin H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Verification of Interface and Bulk Trap Level Density Extraction in SONOS Memory Charge Trapping Layer;Transactions on Electrical and Electronic Materials;2021-04-27

2. Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method;IEEE Journal of the Electron Devices Society;2019

3. Inert ambient annealing effect on MANOS capacitor memory characteristics;Nanotechnology;2015-03-12

4. Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01

5. Charge-Trap Memories with Ion Beam Modified ONO Stacks;Charge-Trapping Non-Volatile Memories;2015
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