The effect of a floating substrate on the operation of silicon-on-sapphire transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31779/01479594.pdf?arnumber=1479594
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1. Ultra Thin Body Partial Silicon-on-Insulator MOSFET with Suppressed Floating Body Effect: A Simulation Study;Journal of Nanoelectronics and Optoelectronics;2017-05-01
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3. Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body Contacts;IEEE Transactions on Nuclear Science;2010-08
4. Role of the substrate during pseudo-MOSFET drain current transients;Solid-State Electronics;2010-03
5. Atomic force microscopy study of sapphire surfaces annealed with a H[sub 2]O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)[sub 3];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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