Atomic force microscopy study of sapphire surfaces annealed with a H[sub 2]O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)[sub 3]-Reference-Cited by-同舟云学术

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Atomic force microscopy study of sapphire surfaces annealed with a H[sub 2]O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)[sub 3]

Published:2006 Issue:3 Volume:24 Page:1572
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Oye Michael M.,Hurst Jeffrey B.,Shahrjerdi Davood,Kulkarni N. N.,Muller A.,Beck A. L.,Sidhu R.,Shih C. K.,Banerjee Sanjay K.,Campbell Joe C.,Holmes Archie L.,Mattord Terry J.,Reifsnider Jason M.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal healing of the sub-surface damage layer in sapphire;Materials Chemistry and Physics;2010-11

2. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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