Optimum design of thyristor gate—Emitter geometry-Reference-Cited by-同舟云学术

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Optimum design of thyristor gate—Emitter geometry

Published:1976-08 Issue:8 Volume:23 Page:917-924
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Munoz-Yague A.,Leturcq P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31753/01478522.pdf?arnumber=1478522

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thyristors;Fundamentals of Power Semiconductor Devices;2018-09-29

2. Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature;IEEE Transactions on Electron Devices;2013-11

3. Thyristors;Fundamentals of Power Semiconductor Devices;2008

4. Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors;Microelectronics Reliability;2002-01

5. An optimized bidirectional lightning surge protection semiconductor device;IEEE Transactions on Electromagnetic Compatibility;1999

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