Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors-Reference-Cited by-同舟云学术

Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors

Published:2002-01 Issue:1 Volume:42 Page:67-76
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Quintero Rodolfo,Cerdeira Antonio,Ortı́z-Conde Adelmo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

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4. A fast CAD model of lasma spread in thyristors using a seminumerical time-domain approach;El-Saba;IEEE Trans Electron Dev,1999

5. Quintero R, Cerdeira A. Circuit simulation of electrical transient behavior of four-layer power devices. SBMicro2000 – 15th International Conference on Microelectronics and Packaging, Manaos, Brazil, 18–24 September 2000

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1. Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor;IET Power Electronics;2024-05

2. Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices;Microelectronics Journal;2006-04

3. 1-D BJT Parameter Extraction for Cuasi-3D Simulation of Four-Layer Devices;2005 2nd International Conference on Electrical and Electronics Engineering