A fast CAD model of plasma spread in thyristors using a seminumerical time-domain approach
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/17009/00784192.pdf?arnumber=784192
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of Short Pulse on Lateral Current Spreading in Turn-on Process of Pulsed Thyristors Under Inductive Load;IEEE Transactions on Plasma Science;2023-01
2. SPICE model of thyristors with amplifying gate and emitter‐shorts;IET Power Electronics;2014-03
3. Investigation about the hot-carrier repelling effect in semiconductor devices, using an analytical solution of the hydrodynamic model;IEEE Transactions on Electron Devices;2006-07
4. Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices;Microelectronics Journal;2006-04
5. Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors;Microelectronics Reliability;2002-01
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