A mechanism for catastrophic failure of avalanche diodes
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31742/01478067.pdf?arnumber=1478067
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device;Journal of Semiconductors;2013-02
2. Failure mode analysis of planar zinc‐diffused In0.53Ga0.47Asp‐i‐nphotodiodes;Journal of Applied Physics;1984-03-15
3. Transient temperature behavior in pulsed double-drift IMPATT diodes;IEEE Transactions on Electron Devices;1980-02
4. Unified approach to breakdown phenomena in silicon p-n junction;Solid-State Electronics;1979-01
5. D.C. characteristics of silicon p-n junctions at avalanche breakdown including selfheating;Solid-State Electronics;1979-01
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