Failure mode analysis of planar zinc‐diffused In0.53Ga0.47Asp‐i‐nphotodiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333420
Reference18 articles.
1. Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes
2. InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength
3. Planar In0.53Ga0.47As Avalanche Photodiodes with Guard-Ring Structure
4. New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region
5. Large-area and visible response VPE InGaAs photodiodes
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