Author:
Okazaki Y.,Nakayama S.,Miyake M.,Kobayashi T.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
2. Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion;MRS Proceedings;2000
3. Dopant Diffusion and Segregation;Polycrystalline Silicon for Integrated Circuits and Displays;1998
4. Applications;Polycrystalline Silicon for Integrated Circuits and Displays;1998
5. The Effect of Nitrogen in a p + Polysilicon Gate on Boron Penetration Through the Gate Oxide;Journal of The Electrochemical Society;1997-12-01