Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit-Reference-Cited by-同舟云学术

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Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Published:2018 Issue: Volume: Page:1-1
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Yuhao,Sun Min,Perozek Josh,Liu Zhihong,Zubair Ahmad,Piedra Daniel,Chowdhury Nadim,Gao Xiang,Shepard Kenneth,Palacios Tomas

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/4357973/08528328.pdf?arnumber=8528328

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2. Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric;IEEE Transactions on Device and Materials Reliability;2024-09

3. Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage;physica status solidi (a);2024-07-25

4. Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs;Electronics;2024-06-15

5. Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications;IEEE Transactions on Electron Devices;2024-06

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