The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit-Reference-Cited by-同舟云学术

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The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

Published:2019-02 Issue:2 Volume:40 Page:299-302
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Kijeong^ORCID,Baliga B. J.^ORCID

Funder

Office of Energy Efficiency and Renewable Energy

North Carolina State University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielaam/55/8631039/8585124-aam.pdf

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison and analysis on static and dynamic performance of 1.2-kV SiC planar MOSFETs with different cell topologies;Materials Science in Semiconductor Processing;2024-12

2. Design and characterization of cell topology effect on SiC VDMOSFETs for high power and frequency applications;Engineering Research Express;2024-03-01

3. Enhancing Characteristics of 1700-V SiC VDMOSFETs: Strategic Integration of Cell Design and Process Optimization;IEEE Transactions on Electron Devices;2024

4. Implementation of 1200V SiC MOSFET with 20% Lower On-Resistance by Designing the Interrupted P+ Region;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

5. A Novel SiC Trench MOSFET with Unilateral P Buried Layer for Improved Oxide Electric Field and Switching Loss;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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