ILD CMP Polishing Pad and Disk Characterization
Author:
Affiliation:
1. GlobalFoundries Singapore Pte Ltd
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9792471/9792473/09792492.pdf?arnumber=9792492
Reference5 articles.
1. Slurry Supply Mechanism Utilizing Capillary Effect in Chemical Mechanical Planarization
2. Soft Chemical Mechanical Polishing Pad for Oxide CMP Applications
3. Chemical mechanical polish: The enabling technology
4. A Study on Selectivity during SiN Chemical Mechanical Polishing for Sub-10nm Logic Device;han;International Conference on Planarization/CMP Technology (ICPT),2016
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1. The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning;Materials Science in Semiconductor Processing;2024-06
2. ILD-CMP Wafer Edge Thickness Profile Stability Improvement via Acid Silicon Oxide Slurry Formulation Design;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
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