Surface-Controlled Metal Oxide Resistive Memory-Reference-Cited by-同舟云学术

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Surface-Controlled Metal Oxide Resistive Memory

Published:2015-12 Issue:12 Volume:36 Page:1307-1309
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ke Jr-Jian,Namura Kyoko,Retamal Jose R. D.,Ho Chih-Hsiang,Minamitake Haruhiko,Wei Tzu-Chiao,Tsai Dung-Sheng,Lin Chun-Ho,Suzuki Motofumi,He Jr-Hau

Funder

Chung-Hua Institution for Economic Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7328593/07310859.pdf?arnumber=7310859

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4. ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM);Crystals;2023-02-28

5. Impact of Surface Roughness and Material Properties of Inert Electrodes on the Threshold Voltages and Their Distributions of ReRAM Memory Cells;ECS Journal of Solid State Science and Technology;2022-10-01

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