Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors-Reference-Cited by-同舟云学术

Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors

Published:2015-09 Issue:9 Volume:36 Page:884-886
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Seung-Hwan,Kim Gwang-Sik,Kim Jeong-Kyu,Park Jin-Hong,Shin Changhwan,Choi Changhwan,Yu Hyun-Yong

Funder

Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning

Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7217862/07151781.pdf?arnumber=7151781

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