Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode-Reference-Cited by-同舟云学术

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Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode

Published:2015-08 Issue:8 Volume:36 Page:802-804
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sang Ho Lee ,Dong Ju Oh ,Ah Young Hwang ,Dong Suk Han ,Shin Kim ,Jae Kyeong Jeong ,Jong Wan Park

Funder

Industrial Strategic Technology Development Program through the Ministry of Knowledge Economy/Ministry of Energy, Industry and Trade

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7164361/07123601.pdf?arnumber=7123601

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts;IEEE Transactions on Electron Devices;2024-09

2. Applications in information display films;Modern Ion Plating Technology;2023

3. Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain;Processes;2021-12-06

4. Back-Channel-Etched IGZO TFTs With Cu-Based Multilayer Electrodes Using MoAl Alloy and MoMn Alloy as Buffer Layers;IEEE Transactions on Electron Devices;2021-12

5. Role of MoTi diffusion barrier in amorphous indium-gallium-zinc-oxide thin-film transistors with a copper source/drain electrode;Thin Solid Films;2021-08

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