Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling-Reference-Cited by-同舟云学术

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Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)
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Author:

Chen Ying-Yu,Gholipour Morteza,Chen Deming

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7422345/7427971/7428103.pdf?arnumber=7428103

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transition metal dichalcogenide FET‐based dynamic random‐access memory;International Journal of Circuit Theory and Applications;2024-07-25

2. A comparative study on ReLU Implementation using TMDFETs;Physica Scripta;2024-06-06

3. Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage;ACS Applied Electronic Materials;2022-11-22

4. A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs;Analog Integrated Circuits and Signal Processing;2022-03-18

5. Exploring device-circuit co-design in LC VCO circuits using monolayer transition metal dischalcogenide MoS2 field-effect transistors;AEU - International Journal of Electronics and Communications;2021-08

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