Resistive-Open Defects in Embedded-SRAM Core Cells: Analysis and March Test Solution
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/9468/30045/01376569.pdf?arnumber=1376569
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of resistive open faults on SRAM;AIP Conference Proceedings;2024
2. H2C-TM: A Hybrid High Coverage Test Method for Improving the Detection of HtD Faults in STT-MRAMs;IEEE Transactions on Device and Materials Reliability;2023-06
3. LCHC-DFT: A Low-Cost High-Coverage Design-for-Testability Technique to Detect Hard-to-Detect Faults in STT-MRAMs in the Presence of Process Variations;IEEE Transactions on Device and Materials Reliability;2022-12
4. An Experimental Evaluation of Resistive Defects and Different Testing Solutions in Low-Power Back-Biased SRAM Cells;Electronics;2022-01-10
5. Study on Paradigm of Variable Length SRAM Embedded Memory Testing;2021 5th International Conference on Electronics, Communication and Aerospace Technology (ICECA);2021-12-02
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