Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC-Reference-Cited by-同舟云学术

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Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Gianesello F.,Monroy A.,Vialla V.,Canderle E.,Bertrand G.,Buczko M.,Coly M.,Nowakowski Jeff,Revil N.,Rolland L.,Gloria D.,Juge A.,Gachon S.,Aubert J. P.,Granger E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7440957/7445433/7445454.pdf?arnumber=7445454

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Tale of Two Phases: An Overview of Phase-Change Material RF Switch Technology: Sub-20-fs R_ON*C_OFF RF Switch Technology for the Mm-Wave and 5G/6G Revolutions;IEEE Microwave Magazine;2024-08

2. Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches;IEEE Transactions on Electron Devices;2023-11

3. Notched gate MOSFET for capacitance reduction in RF SOI technology;2023 IEEE International Conference on Design, Test and Technology of Integrated Systems (DTTIS);2023-11-01

4. Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

5. Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension;Electronics;2022-07-27

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