A low turn-on voltage vertical GaN SBD with improved heat dissipation
Author:
Affiliation:
1. School of Microelictronics, Hefei University of Technology,Hefei,China
2. NoleTec AB,Balsta,Sweden,SE-746 93
Funder
Hefei University of Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10165685/10164836/10166706.pdf?arnumber=10166706
Reference9 articles.
1. Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2;liu;Acta Phys Sin,2022
2. 1 kV/ $\mathrm{m}\Omega\cdot\text{cm}2$ vertical GaN-on-GaN Schottky barrier diodes with high switching performance;yang;2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD),0
3. Analysis of Schottky Forward Current Transport Mechanisms in AlGaN /GaN HEMTs over a Wide Temperature Range
4. L-Band 10-kW AlGaN/GaN HEMT with operating voltage of 100V
5. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
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