Effect on the performance of staircase APDs of electron impact ionization within the graded-gap region-Reference-Cited by-同舟云学术

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Effect on the performance of staircase APDs of electron impact ionization within the graded-gap region

Published:1988 Issue:8 Volume:35 Page:1357-1363
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fyath R.S.,O'Reilly J.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/152/00002559.pdf?arnumber=2559

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiodes;IEEE Transactions on Electron Devices;2001-06

2. Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance;Superlattices and Microstructures;2000-08

3. Excess Noise Characteristics of Hydrogenated Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Structure;Japanese Journal of Applied Physics;2000-04-30

4. Amorphous Silicon Avalanche Photodiode Films Using a Functionally Graded Superlattice Structure;Japanese Journal of Applied Physics;1998-03-30

5. Photocurrent multiplication in hydrogenated amorphous silicon staircase photodiode films;Applied Physics Letters;1996-03-25

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