Photocurrent multiplication in hydrogenated amorphous silicon staircase photodiode films-Reference-Cited by-同舟云学术

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Photocurrent multiplication in hydrogenated amorphous silicon staircase photodiode films

Published:1996-03-25 Issue:13 Volume:68 Page:1835-1837
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sawada Kazuaki,Akata Shinya,Takeuchi Toshinori,Ando Takao

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116029

Reference13 articles.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements;Journal of Non-Crystalline Solids;2004-06

2. High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing;Journal of Organometallic Chemistry;2000-10

3. Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance;Superlattices and Microstructures;2000-08

4. Excess noise characteristics of amorphous silicon staircase photodiode films;Applied Physics Letters;1999-09-06

5. Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H;Journal of Non-Crystalline Solids;1998-05

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