Measurement and Modeling of GaAs Based Nano-pHEMT: Small Signal to Large Signal Analysis
Author:
Affiliation:
1. University of Chittagong,Electrical and Electronic Engineering,Chittagong,Bangladesh
2. The University of Manchester,Electrical and Electronic Engineering,Manchester,U.K
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10101485/10100742/10101628.pdf?arnumber=10101628
Reference17 articles.
1. A MESFET Model for Use in the Design of GaAs Integrated Circuits
2. Temperature-Dependent DC and Small-Signal Analysis of AlGaAs/InGaAs pHEMT for High-Frequency Applications
3. Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology
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