Downsizing and memory array integration of Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors-Reference-Cited by-同舟云学术

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Downsizing and memory array integration of Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors

Published:2012-10 Issue: Volume: Page:
ISSN:
Container-title:2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings
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Author:

Sakai Shigeki,Zhang Xizhen,Hai Le Van,Zhang Wei,Takahashi Mitsue

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6615629/6632846/06632862.pdf?arnumber=6632862

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process;Nanomaterials;2021-01-04

2. Novel Application of FeFETs to NAND Flash Memory Circuits;Topics in Applied Physics;2020

3. Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate Stacks;Topics in Applied Physics;2020

4. The Effect of Kr/O₂ Sputtering on the Ferroelectric Properties of SrBi₂Ta₂O₉ Thin Film Formation;IEICE Transactions on Electronics;2019-06-01

5. Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors;Materials;2019-01-28

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