The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation
Author:
Affiliation:
1. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University
2. Tokyo Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E102.C/6/E102.C_2018FUP0005/_pdf
Reference37 articles.
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2. [2] S. Yu, “Neuro-inspired computing with emerging nonvolatile memories,” Proc. IEEE., vol.106, pp.260-285, 2018.
3. [3] J. Van Houdt, “3D Memories and Ferroelectrics,” 2017 IEEE 9th Int. Mem. Work, pp.1-3, 2017. 10.1109/imw.2017.7939066
4. [4] N. Gong and T.-P. Ma, “Why Is FE-HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective,” IEEE Electron Device Lett., vol.37, no.9, pp.1123-1126, 2016. 10.1109/led.2016.2593627
5. [5] E. Yurchuk, S. Mueller, D. Martin, S. Slesazeck, U. Schroeder, T. Mikolajick, J. Muller, J. Paul, R. Hoffmann, J. Sundqvist, T. Schlosser, R. Boschke, R. Van Bentum, and M. Trentzsch, “Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories,” IEEE Int. Reliab. Phys. Symp. Proc., pp.1-5, 2014. 10.1109/irps.2014.6860603
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO<sub>2</sub> Gate Insulator for Analog Memory Application;IEICE Transactions on Electronics;2023-10-01
2. Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO₂ Formation for MFSFET With Pt Gate Electrode;IEEE Transactions on Electron Devices;2021-05
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