Noise-aware design methodology of ultra-low-noise transimpedance amplifiers-Reference-Cited by-同舟云学术

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Noise-aware design methodology of ultra-low-noise transimpedance amplifiers

Published:2021-11-28 Issue: Volume: Page:
ISSN:
Container-title:2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)
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Author:

Mohamed Ayman,Djekic Denis,Baumgartner Lars,Anders Jens

Funder

Carl Zeiss Foundation

The German Research Foundation (DFG)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9665417/9665446/09665532.pdf?arnumber=9665532

Reference14 articles.

1. Reducing MOSFET 1/f noise and power consumption by switched biasing

2. Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures

3. low-noise operation in buried-channel mosfet's;watanabe;IEEE Electron Device Letters,1985

4. An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications

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