Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters-Reference-Cited by-同舟云学术

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Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters

Published:2018-02 Issue:2 Volume:39 Page:224-227
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cai Yuefei^ORCID,Zou Xinbo^ORCID,Liu Chao^ORCID,Lau Kei May^ORCID

Funder

Research Grants Council of the Hong Kong Special Administrative Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8269808/08170276.pdf?arnumber=8170276

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic integrated all-GaN-based µLED display by selective area regrowth;Optics Express;2023-09-06

2. P‐163: Late‐News Poster: Demonstration of Color Tunable µLED Passive Matrix;SID Symposium Digest of Technical Papers;2023-06

3. A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements;Electronics;2023-04-08

4. InGaN Color Tunable Full Color Passive Matrix;IEEE Electron Device Letters;2023-03

5. Research on monolithic integrated driver of Micro LED;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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