A Study of High Aspect Ratio Si Trench in Cycle Mode Etching with Mask no Loss
Author:
Affiliation:
1. Beijing NAURA Microelectronics Equipment Co. Ltd.,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10532051.pdf?arnumber=10532051
Reference5 articles.
1. Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers
2. Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion Energy and Flux Controlled
3. Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
4. Effects of O2 plasma treatment on moisture barrier properties of SiO2 grown by plasma-enhanced atomic layer deposition
5. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma[J];Metzler;J. Chem. Phys.,2017
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