Impact of Thickness Dependent Ferroelectric and Interface Charge Variation on Device-to-Device Variation in Ferroelectric FET-Reference-Cited by-同舟云学术

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Impact of Thickness Dependent Ferroelectric and Interface Charge Variation on Device-to-Device Variation in Ferroelectric FET

Published:2024-03-17 Issue: Volume:7 Page:1-3
ISSN:
Container-title:2024 Conference of Science and Technology for Integrated Circuits (CSTIC)
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Author:

Zhang Fan¹,Zhang Zhaohao²,Huo Jiali²,Zhang Qingzhu²,Xu Gaobo²,Wu Zhenhua²,Han Genquan¹,Yin Huaxiang²,Liu Yan¹

Affiliation:

1. School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi'an,China,710071

2. Institute of Microelectronics, CAS,Integrated Circuit Advanced Process R&D Center and the State Key Lab of Fabrication Technologies for Integrated Circuits,Beijing,China,100029

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531883.pdf?arnumber=10531883

Reference6 articles.

1. 2013 IEEE International Electron Devices Meeting

2. 2019 Symposium on VLSI Technology

3. 2020 IEEE International Reliability Physics Symposium (IRPS)

4. Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

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