Anomalous Hot Carrier Injection Induced Degradation of Drain Current in High-Voltage NMOS with Shallow Trench Isolation
Author:
Affiliation:
1. School of Microelectronics, Shanghai Univerdity,Shanghai,P.R. China
2. Shanghai Huali Microelectronics Corporation,Shanghai,P.R. China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531943.pdf?arnumber=10531943
Reference4 articles.
1. On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region
2. Anomalous Hot-Carrier-Induced Increase in Saturation-Region Drain Current in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
3. The Failure Mechanism Worst Stress Condition for Hot Carrier Injection of NMOS
4. Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI
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