Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI-Reference-Cited by-同舟云学术

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Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI

Published:2010 Issue: Volume: Page:
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Container-title:2010 IEEE International Reliability Physics Symposium
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Author:

Yu-Hui Huang ,Shih J.R.,Lee Y.H.,Sunnys Hsieh ,Liu C.C.,Wu Kenneth,Chou H.L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488832.pdf?arnumber=5488832

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous Hot Carrier Injection Induced Degradation of Drain Current in High-Voltage NMOS with Shallow Trench Isolation;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. The Relationship Between Resistive Protective Oxide (RPO) and Hot Carrier Stress (HCS) Degradation in n-Channel LD SOI MOSFET;IEEE Transactions on Electron Devices;2021-03

3. Hot-Carrier-Induced Forward and Reverse Saturation Current Degradations for the n-Type Symmetric EDMOS Transistor;IEEE Electron Device Letters;2014-07

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