SRAM cell with improved stability and reduced leakage current for subthreshold region of operation

Author:

Sreelakshmi P,Pande Kirti S.,Murty N. S.

Publisher

IEEE

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Robust Body Biased Level Shifter;2023 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER);2023-10-13

2. Optimized Hazard Free Pipelined Architecture Block for RV32I RISC-V Processor;2022 3rd International Conference on Smart Electronics and Communication (ICOSEC);2022-10-20

3. A Cascode Current Mirror Based 90 mV to 1.8 V Level Shifter with Alleviated Delay;2022 International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics ( DISCOVER);2022-10-14

4. MTCMOS 8T SRAM Cell with Improved Stability and Reduced Power Consumption;2021 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER);2021-11-19

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