A 220-325 GHz Subharmonic Receiver with 14.8 dB Peak Conversion Gain for FMCW Radar in SiGe BiCMOS Technology
Author:
Affiliation:
1. Institute for Electronics Engineering, Friedrich-Alexander University (FAU),Erlangen-Nuremberg,Germany
2. Technical University Braunschweig,Braunschweig,Germany
Funder
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720035/9720036/09720057.pdf?arnumber=9720057
Reference9 articles.
1. A SiGe-based wideband 220–310-GHz subharmonic receiver front-end for high resolution radar applications
2. Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends
3. A three-level broad-banded monolithic analog multiplier
4. Design Methodology for Automatically Designed, Integrated Marchand Baluns with Low Insertion Loss at Lowest Phase Imbalance
5. A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation;IEEE Microwave and Wireless Technology Letters;2024-06
2. A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
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