The dual gate emitter switched thyristor (DG-EST)
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/10185/00475566.pdf?arnumber=475566
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices;2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting;2009-10
3. Progress in MOS-controlled bipolar devices and edge termination technologies;Microelectronics Journal;2004-03
4. A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness;Microelectronic Engineering;2003-10
5. Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3kV intelligent power chip;Microelectronics Journal;2001-05
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