Abstract
The trench field ring for breakdown voltage of power devices is proposed. The new ring can improve 10% efficiency comparing with conventional field ring. Five parameters of trench field ring for design of trench field ring are analyzed and 2-D devices simulation and process simulations are carried out. The number of field ring, juction depth, distance of field rings, trench width, doping profiled are discussed. The proposed trench field ring was better for higher voltage more than 1000V.
Publisher
Trans Tech Publications, Ltd.
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