The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifier-Reference-Cited by-同舟云学术

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The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifier

Published:1997-03 Issue:3 Volume:7 Page:66-68
ISSN:1051-8207
Container-title:IEEE Microwave and Guided Wave Letters
language:
Short-container-title:IEEE Microw. Guid. Wave Lett.

Author:

Kobayashi K.W.,Oki A.K.,Cowles J.,Tran L.T.,Grossman P.C.,Block T.R.,Streit D.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Physics and Astronomy,General Engineering

Link

http://xplorestaging.ieee.org/ielx4/75/12114/00556034.pdf?arnumber=556034

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/P_dc LFOM at 48 GHz;IEEE Journal of Solid-State Circuits;2023-09

2. High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHz;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

3. Improved HBT linearity with a "post-distortion"-type collector linearizer;IEEE Microwave and Wireless Components Letters;2003-03

4. Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3;IEEE Microwave and Wireless Components Letters;2001-09

5. Linearity characteristics of GaAs HBTs and the influence of collector design;IEEE Transactions on Microwave Theory and Techniques;2000

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