A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm-Reference-Cited by-同舟云学术

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A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm

Published:2017-01 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Bouvot Simon,Quemerais Thomas,Azevedo Goncalves Joao Carlos,Lepilliet Sylvie,Ducournau Guillaume,Danneville Francois,Gloria Daniel

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7869197/7874342/07874385.pdf?arnumber=7874385

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110–170 GHz) Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. An Overview of State-of-the-Art D-Band Radar System Components;Chips;2022-09-21

3. Energy Efficiency Tradeoffs for Sub-THz Multi-User MIMO Base Station Receivers;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

4. THz Detectors and Related Topics;Introduction to Terahertz Electronics;2020-10-02

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