Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110–170 GHz) Applications-Reference-Cited by-同舟云学术

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Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110–170 GHz) Applications

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Maurette-Blasini Cristina¹,Weber Rainer²,Wagner Sandrine²,Schwantuschke Dirk²,Chartier Sébastien²,Quay Rüdiger¹

Affiliation:

1. Institute for Sustainable Systems Engineering, University of Freiburg,Germany

2. Fraunhofer Institute of Applied-Solid-State Physics,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310862.pdf?arnumber=10310862

Reference9 articles.

1. A balanced resistive 210 GHz mixer with 50 GHz IF bandwidth;lopez-diaz;The 5th European Microwave Integrated Circuits Conference,0

2. A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm

3. Subharmonically Pumped 210 GHz I/Q Mixers

4. High-Gain Millimeter-Wave AlGaN/GaN Transistors

5. 450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology

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