A 260–300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process
Author:
Affiliation:
1. Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea
Funder
Electronics and Telecommunications Research Institute (ETRI) Grant
Korean Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10097276/10004855.pdf?arnumber=10004855
Reference24 articles.
1. Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate
2. A 225–265 GHz I-Q Receiver in 130-nm SiGe BiCMOS for FMCW Radar Applications
3. A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer
4. A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers
5. Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz
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3. Compact Multifunctional 180° Hybrid-Based 300-GHz Subharmonic I/Q Downconversion Resistive Mixers in 130-nm SiGe Process;IEEE Solid-State Circuits Letters;2024
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