A 225–265 GHz I-Q Receiver in 130-nm SiGe BiCMOS for FMCW Radar Applications-Reference-Cited by-同舟云学术

A 225–265 GHz I-Q Receiver in 130-nm SiGe BiCMOS for FMCW Radar Applications

Published:2022-07 Issue:7 Volume:32 Page:899-902
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Turkmen Esref¹^ORCID,Aksoyak Ibrahim Kagan¹^ORCID,Debski Wojciech¹,Winkler Wolfgang¹,Ulusoy Ahmet Cagri²

Affiliation:

1. Silicon Radar GmbH, Frankfurt (Oder), Germany

2. Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany

Funder

German Federal Ministry of Education and Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9816061/09721038.pdf?arnumber=9721038

Reference18 articles.

1. A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology

2. A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

3. A 240 GHz direct conversion IQ receiver in $0.13~\mu\text{m}$ SiGe BiCMOS technology;elkhouly;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2013

4. SiGe HBT technology with $\text{f}_{T}/\text{f}_{max}$ of 300GHz/500GHz and 2.0 ps CML gate delay;heinemann;IEDM Tech Dig,2010

5. Design considerations for direct-conversion receivers

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