Statistical measurements and Monte-Carlo simulations of DCR in SPADs-Reference-Cited by-同舟云学术

Statistical measurements and Monte-Carlo simulations of DCR in SPADs

Published:2022-09-19 Issue: Volume: Page:
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Container-title:ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)
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Author:

Sicre Mathieu¹,Agnew Megan²,Buj Christel¹,Coutier Caroline³,Golanski Dominique¹,Helleboid Remi¹,Mamdy Bastien¹,Nicholson Isobel²,Pellegrini Sara²,Rideau Denis¹,Roy David¹,Calmon Francis⁴

Affiliation:

1. TR&D, STMicroelectronics,Crolles,France

2. Imaging Division, STMicroelectronics,Edinburgh,U.K

3. Univ. Grenoble Alpes,CEA, LETI,Grenoble,France

4. Université de Lyon, INSA Lyon,INL, UMR CNRS 5270,Villeurbanne,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9911257/9911222/09911519.pdf?arnumber=9911519

Reference20 articles.

1. Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS

2. Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model;garetto;Solid-State Electronics,2011

3. Computer-aided numerical analysis of silicon solar cells

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3. Characterization and modeling of DCR and DCR drift variability in SPADs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Identification of stress factors and degradation mechanisms inducing DCR drift in SPADs;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09