High-speed and uncooled operation of 1.3-/spl mu/m InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates-Reference-Cited by-同舟云学术

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High-speed and uncooled operation of 1.3-/spl mu/m InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates

Published:2006-07 Issue:7 Volume:24 Page:2906-2911
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Chih-Wei Hu ,Feng-Ming Lee ,Te-Chin Peng ,Tzu-Min Ou ,Meng-Chyi Wu ,Yin-Hsun Huang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/50/34614/01650567.pdf?arnumber=1650567

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm;INORG MATER+;2014

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5. High-power InP/GaInAsP buried heterostructure semiconductor laser with a modulation band of up to 10 GHz;Inorganic Materials;2010-08-29

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