Abstract
As a continuation of our studies aimed at creating semiconductor lasers based on buried InP/GaInAsP heterostructures, we consider the design and fabrication aspects of 1310-nm laser diodes for operation at elevated temperatures. We report the key features of the fabrication process and parameters of the laser emitters at temperatures of up to 120°C, and present their power-current and spectral characteristics.
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Original Russian Text © M.G. Vasil’ev, A.M. Vasil’ev, A.D. Izotov, A.A. Shelyakin, 2014, published in Neorganicheskie Materialy, 2014, Vol. 50, No. 9, pp. 963–967.
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Vasil’ev, M.G., Vasil’ev, A.M., Izotov, A.D. et al. High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm. Inorg Mater 50, 888–891 (2014). https://doi.org/10.1134/S0020168514090167
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DOI: https://doi.org/10.1134/S0020168514090167