Impact of Non-Uniform Ferroelectric Dielectric Phase and Metal Grains on the Performance of MFM Capacitor and Ferroelectric FETs-Reference-Cited by-同舟云学术

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Impact of Non-Uniform Ferroelectric Dielectric Phase and Metal Grains on the Performance of MFM Capacitor and Ferroelectric FETs

Published:2023-07-23 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
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Author:

Chauhan Nitanshu¹,Behera Amit Kumar²,Garg Chirag³,Dasgupta Sudeb²,Bulusu Anand²

Affiliation:

1. National Institute of Technology,Dept. of Electronics Engineering,Srinagar Paurigarhwal,Uttarakhand,India

2. Indian Institute of Technology Roorkee,Dept. of Electronics and Comm. Engg,Roorkee,India

3. University of California Berkeley,Dept. of Electrical and Electronics Engg

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10265288/10265319/10265412.pdf?arnumber=10265412

Reference17 articles.

1. Investigation of Trap-Induced Performance Degradation and Restriction on Higher Ferroelectric Thickness in Negative Capacitance FDSOI FET

2. Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI

3. High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

4. Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

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