Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI-Reference-Cited by-同舟云学术

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Chauhan Nitanshu¹,Garg Chirag¹,Ni Kai²,Behera Amit Kumar¹,Yadav Sarita¹,Banchhor Shashank¹,Bagga Navjeet³,Dasgupta Avirup¹,Datta Arnab¹,Dasgupta Sudeb¹,Bulusu Anand¹

Affiliation:

1. IIT,Roorkee,India

2. Rochester Institute of Technology,USA

3. PDPM IIIT,Jabalpur,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764552.pdf?arnumber=9764552

Reference22 articles.

1. Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET

2. Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

3. Investigation of Trap-Induced Performance Degradation and Restriction on Higher Ferroelectric Thickness in Negative Capacitance FDSOI FET

4. Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution

5. Hysteresis-free negative capacitance in the multi-domain scenario for logic applications

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