Accurate MOSFET Modeling Approach with Equivalent Series Resistance of Output Capacitance for Simulating Turn-OFF Oscillation
Author:
Affiliation:
1. Graduate School of Systems Design, Tokyo Metropolitan University,Department of Electrical Engineering and Computer Science,Tokyo,Japan
Funder
JSPS (Japan Society for the Promotion of Science) KAKENHI
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773780.pdf?arnumber=9773780
Reference13 articles.
1. Low-voltage Power MOSFET switching behavior and performance evaluation in motor control application topologies;STMicroelectronics,2018
2. New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors
3. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices
4. Impact of current measurement on switching characterization of GaN transistors
5. Modeling and Analysis of SiC MOSFET Switching Oscillations
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1. Systematic Derivation and Experimental Verification of a Compact Loss Model for Soft-switching Half-bridges;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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