Impact of current measurement on switching characterization of GaN transistors-Reference-Cited by-同舟云学术

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Impact of current measurement on switching characterization of GaN transistors

Published:2014-10 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Workshop on Wide Bandgap Power Devices and Applications
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Author:

Lautner Jennifer,Piepenbreier Bernhard

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6949765/6964601/06964632.pdf?arnumber=6964632

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of a Low-Cost Wide Bandwidth Current Shunt for Characterization of Wide Bandgap Semiconductor Devices;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices;Sensors;2023-05-10

3. A High-Bandwidth and Easy-to-Integrate Parasitics-Based Switching Current Measurement Method for Fast GaN Devices;IEEE Transactions on Power Electronics;2023-01

4. Power losses estimation in a GaN-based synchronous Buck LED driver;2022 14th Seminar on Power Electronics and Control (SEPOC);2022-11-12

5. Accurate MOSFET Modeling Approach with Equivalent Series Resistance of Output Capacitance for Simulating Turn-OFF Oscillation;2022 IEEE Applied Power Electronics Conference and Exposition (APEC);2022-03-20

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