TLP and HBM ESD test correlation for power ICs-Reference-Cited by-同舟云学术

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TLP and HBM ESD test correlation for power ICs

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Conference of Electron Devices and Solid-state Circuits
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Author:

Rui Ma ,Li Wang ,Chen Zhang ,Fei Lu ,Zongyu Dong ,Wang Albert,Wei Lu ,Yonghua Song ,Bin Zhao

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6613640/6628028/06628149.pdf?arnumber=6628149

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Method for Improving 8V ESD Performance;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. ESD Induced Irreversible Degradation Processes in the Semiconductor Devices;2024 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2024-02-29

3. Analysis of HBM Failure in 3D NAND Flash Memory;Electronics;2022-03-18

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