A New Method for Improving 8V ESD Performance
Author:
Affiliation:
1. Shanghai Huali Microelectronics Corporation,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10531806/10531771/10531830.pdf?arnumber=10531830
Reference7 articles.
1. Integrated circuit ESD protection structure failure analysis based on TLP technique
2. CDM stress rise time: impact on Forward Recovery Effect for HV ESD protections
3. Automotive High-Speed Interfaces: Future Challenges for System-level HV-ESD Protection and First- Time-Right Design
4. Behavior modeling for whole-chip HV ESD protection circuits
5. A Robust Scalable ESD Protection Device integrating Drain side Floating P+ Diffusion with tunable ESD Design Window and effective Latch-up immunity for High-Voltage Power Clamp applications
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