Author:
Tega Naoki,Hisamoto Digh,Shima Akio,Shimamoto Yasuhiro
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
11 articles.
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1. Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS;Micromachines;2023-09-30
3. Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
4. Structure optimization design based on 4h-SiC MOS tube;International Conference on Optoelectronic Information and Functional Materials (OIFM 2023);2023-08-07
5. A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD);Crystals;2023-04-10