Symmetric Lateral Doping-Free BJT: A Novel Design for Mixed Signal Applications

Author:

Sahu Abhishek,Bramhane Lokesh Kumar,Singh JawarORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design and reliability assessment of an ultra-thin body electrostatically doped bipolar transistor for mixed signal applications;Memories - Materials, Devices, Circuits and Systems;2024-08

2. MOSFET on the Horizon: What’s New and What’s Next;MOSFET - Developments and Trends [Working Title];2024-04-16

3. Energy Efficient Implementation of Processing Elements for CNN Hardware Accelerator;2023 11th International Conference on Emerging Trends in Engineering & Technology - Signal and Information Processing (ICETET - SIP);2023-04-28

4. Thin Body Doping-free Bipolar Transistors: A Performance Projection at Circuits Level;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

5. A Thermally Stable Quasi-CMOS Bipolar Logic;Electronics;2021-12-21

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